Proceedings Paper
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Paper Abstract
We report a high-power VECSEL emitting <8W around 615 nm. The gain chip of the laser was grown by plasmaassisted molecular beam epitaxy and it comprised 10 GaInNAs quantum wells. The VECSEL cavity had a V-shaped geometry and a 10-mm-long non-critically phase-matched LBO crystal for second harmonic generation. The cavity incorporated also an etalon and a birefringent filter for controlling the output wavelength. With the aid of the secondharmonic output and the infrared light leaking out from the laser cavity, the single-pass conversion efficiency of the crystal was estimated to have a value of 0.75%.
Paper Details
Date Published: 4 March 2015
PDF: 6 pages
Proc. SPIE 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V, 934909 (4 March 2015); doi: 10.1117/12.2079162
Published in SPIE Proceedings Vol. 9349:
Vertical External Cavity Surface Emitting Lasers (VECSELs) V
Mircea Guina, Editor(s)
PDF: 6 pages
Proc. SPIE 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V, 934909 (4 March 2015); doi: 10.1117/12.2079162
Show Author Affiliations
Tomi Leinonen, Tampere Univ. of Technology (Finland)
Jussi-Pekka Penttinen, Tampere Univ. of Technology (Finland)
Ville-Markus Korpijärvi, Tampere Univ. of Technology (Finland)
Jussi-Pekka Penttinen, Tampere Univ. of Technology (Finland)
Ville-Markus Korpijärvi, Tampere Univ. of Technology (Finland)
Emmi Kantola, Tampere Univ. of Technology (Finland)
Mircea Guina, Tampere Univ. of Technology (Finland)
Mircea Guina, Tampere Univ. of Technology (Finland)
Published in SPIE Proceedings Vol. 9349:
Vertical External Cavity Surface Emitting Lasers (VECSELs) V
Mircea Guina, Editor(s)
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