Proceedings Paper
Effects of low energy H-ion implantation on the optical properties of ZnMgO thin films| Format | Member Price | Non-Member Price |
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Paper Abstract
The optical and structural characteristics of H− ion-implanted ZnMgO were investigated by temperature-dependent photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD). Low-energy (40 keV and 50 keV) hydrogen implantation was performed on RF-sputter-deposited ZnMgO thin films by varying the fluences from 1013 ions/cm2 to 5 × 1014 ions/cm2 . Highly c-axis-oriented <002> ZnO films were observed for all samples, as confirmed by HRXRD. A gradual decrease in the acceptor concentration was observed with increasing fluence, as confirmed by low-temperature PL results. This suggests that hydrogen atoms act as a shallow donor.
Paper Details
Date Published: 13 March 2015
PDF: 6 pages
Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93641Y (13 March 2015); doi: 10.1117/12.2079139
Published in SPIE Proceedings Vol. 9364:
Oxide-based Materials and Devices VI
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)
PDF: 6 pages
Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93641Y (13 March 2015); doi: 10.1117/12.2079139
Show Author Affiliations
Shantanu Saha, Indian Institute of Technology Bombay (India)
Saurabh Nagar, Indian Institute of Technology Bombay (India)
Saurabh Nagar, Indian Institute of Technology Bombay (India)
S. K. Gupta, Bhabha Atomic Research Ctr. (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)
Published in SPIE Proceedings Vol. 9364:
Oxide-based Materials and Devices VI
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)
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