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Proceedings Paper

Interface structural characterization of strained-layer (001) SimGen superlattices by Raman spectroscopy
Author(s): Wolfgang S. Bacsa; Manfred Ospelt; J. Henz; H. von Kaenel; E. Mueller; P. Wachter
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Paper Abstract

Vibrational modes of the buried interfacial regions in strained layer SimGen SL's have been studied by Raman spectroscopy. The distinct but weak excitations depend on the strain distribution and are suggested to be related to localized modes of Si0.5Ge0.5 alloy layers at the interfaces. An extended annealing study is presented showing how these excitations become more pronounced as the interfaces are broadened. Long range order has been found by ThM in contrast to Raman scattering.

Paper Details

Date Published: 1 October 1990
PDF: 12 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20790
Show Author Affiliations
Wolfgang S. Bacsa, ETH Hoenggerberg (Switzerland)
Manfred Ospelt, ETH Hoenggerberg (Switzerland)
J. Henz, ETH Hoenggerberg (Switzerland)
H. von Kaenel, ETH Hoenggerberg (Switzerland)
E. Mueller, ETH Hoenggerberg (Switzerland)
P. Wachter, ETH Hoenggerberg (Switzerland)

Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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