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Proceedings Paper

Investigation of the influence of unwanted micro lenses caused by semiconductor processing excursions on optical behavior of CMOS photodiodes
Author(s): Andrea Kraxner; Jong Mun Park; Rainer Minixhofer
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Paper Abstract

In this work the influence of nanoscale particles caused by processing excursions during back end of line (BEOL) processing on top of the photodiode active region was examined. To investigate the influence of the particles on the photodiode performance, wafer level optical responsivity measurements were done. In addition to the measurements the effect of the particles was simulated with a simplified model based on a modified transfer matrix method (MTMM)1 . The simulation and measurements are in very good agreement with each other and lead to the conclusion that even though some decrease of sensitivity was observed, the overall system variability was reduced by the presence of particles. Furthermore, the influence of the dielectric stack layer thickness variability on the photon flux density is reduced.

Paper Details

Date Published: 16 March 2015
PDF: 10 pages
Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93571O (16 March 2015); doi: 10.1117/12.2079022
Show Author Affiliations
Andrea Kraxner, ams AG (Austria)
Graz Univ. of Technology (Austria)
Jong Mun Park, ams AG (Austria)
Rainer Minixhofer, ams AG (Austria)

Published in SPIE Proceedings Vol. 9357:
Physics and Simulation of Optoelectronic Devices XXIII
Bernd Witzigmann; Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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