
Proceedings Paper
Progress in reliable single emitters and laser bars for efficient CW-operation in the near-infrared emission rangeFormat | Member Price | Non-Member Price |
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Paper Abstract
Laser bars, laser arrays, and single emitters are highly-desired light sources e.g. for direct material processing, pump
sources for solid state and fiber lasers or medical applications. These sources require high output powers with optimal
efficiency together with good reliability resulting in a long lifetime of the device. Desired wavelengths range from
760 nm in esthetic skin treatment over 915 nm, 940 nm and 976 nm to 1030 nm for direct material processing and
pumping applications.
In this publication we present our latest developments for the different application-defined wavelengths in continuouswave
operation mode. At 760nm laser bars with 30 % filling factor and 1.5 mm resonator length show optical output
powers around 90-100 W using an optimized design. For longer wavelengths between 915 nm and 1030 nm laser bars
with 4 mm resonator length and 50 % filling factor show reliable output powers above 200 W. The efficiency reached
lies above 60% and the slow axis divergence (95% power content) is below 7°. Further developments of bars tailored for
940 nm emission wavelength reach output powers of 350 W. Reliable single emitters for effective fiber coupling having
emitter widths of 90 μm and 195 μm are presented. They emit optical powers of 12 W and 24 W, respectively, at
emission wavelengths of 915 nm, 940 nm and 976 nm. Moreover, reliability tests of 90 μm-single emitters at a power
level of 12W currently show a life time over 3500 h.
Paper Details
Date Published: 13 March 2015
PDF: 10 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 93480K (13 March 2015); doi: 10.1117/12.2079001
Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)
PDF: 10 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 93480K (13 March 2015); doi: 10.1117/12.2079001
Show Author Affiliations
Martin Zorn, JENOPTIK Diode Lab. GmbH (Germany)
Ralf Huelsewede, JENOPTIK Diode Lab GmbH (Germany)
Agnieszka Pietrzak, JENOPTIK Diode Lab. GmbH (Germany)
Ralf Huelsewede, JENOPTIK Diode Lab GmbH (Germany)
Agnieszka Pietrzak, JENOPTIK Diode Lab. GmbH (Germany)
Jens Meusel, JENOPTIK Laser GmbH (Germany)
Jürgen Sebastian, JENOPTIK Diode Lab. GmbH (Germany)
Jürgen Sebastian, JENOPTIK Diode Lab. GmbH (Germany)
Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)
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