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Proceedings Paper

Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniques
Author(s): Dong-Soo Shin; Dong-Pyo Han; Dong-Guang Zheng; Chan-Hyoung Oh; Hyun-Sung Kim; Kyu-Sang Kim; Jong-In Shim
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Paper Abstract

In InGaN/GaN blue light-emitting diodes (LEDs) widely utilized for general lighting, there exist various material issues that lead to the unwanted nonradiative recombination. In this paper, we utilize various characterization techniques to investigate the nonradiative recombination mechanisms in LED devices. With the characterization techniques such as temperature-dependent external quantum efficiency, current-voltage, and electroluminescence spectra, we show that different nonradiative recombination processes such as the Shockley-Read-Hall recombination and the defect-assisted tunneling can play roles in the LED devices. Information on the dominant nonradiative recombination obtained by these analyses can be used for further improving the quantum efficiency of the device.

Paper Details

Date Published: 13 March 2015
PDF: 4 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632H (13 March 2015); doi: 10.1117/12.2078970
Show Author Affiliations
Dong-Soo Shin, Hanyang Univ. (Korea, Republic of)
Dong-Pyo Han, Hanyang Univ. (Korea, Republic of)
Dong-Guang Zheng, Hanyang Univ. (Korea, Republic of)
Chan-Hyoung Oh, Hanyang Univ. (Korea, Republic of)
Hyun-Sung Kim, Hanyang Univ. (Korea, Republic of)
Kyu-Sang Kim, Sangji Univ. (Korea, Republic of)
Jong-In Shim, Hanyang Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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