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Proceedings Paper

Semi/non-polar nitride quantum wells for high-efficient light emitters
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Paper Abstract

We describe the optical properties of semi/non-polar InGaN and AlGaN quantum wells. In semipolar (11¯22) InGaN QWs, spatially uniform but spectrally broad emissions are observed. This finding is interpreted with consideration of the exciton migration length shortened by the fast radiative recombination lifetime due to the reduced electric field. Non/semipolar AlGaN QWs are also fabricated. In the semipolar (1¯102) AlGaN QWs, the radiative recombination lifetimes faster than that in the (0001) QW are confirmed experimentally. As a consequence, much stronger emission is achieved from the semipolar AlGaN QWs at room temperature

Paper Details

Date Published: 13 March 2015
PDF: 6 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631T (13 March 2015); doi: 10.1117/12.2078873
Show Author Affiliations
Mitsuru Funato, Kyoto Univ. (Japan)
Yoichi Kawakami, Kyoto Univ. (Japan)

Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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