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Proceedings Paper

Extremely high near field enhancement in a novel plasmonic nano material used for photovoltage generation
Author(s): Debadrita Paria; Kallol Roy; Shishir Kumar; Haobijam Johnson Singh; Srinivasan Raghavan; Arindam Ghosh; Ambarish Ghosh
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Paper Abstract

Enhancement of localized electric field near metal (plasmonic) nanostructures can have various interesting applications in sensing, imaging, photovoltage generation etc., for which significant efforts are aimed towards developing plasmonic systems with well designed and large electromagnetic response. In this paper, we discuss the wafer scale fabrication and optical characterization of a unique three dimensional plasmonic material. The near field enhancement in the visible range of the electromagnetic spectrum obtained in these structures (order of 106), is close to the fundamental limit that can be obtained in this and similar EM field enhancement schemes. The large near field enhancement has been reflected in a huge Raman signal of graphene layer in close proximity to the plasmonic system, which has been validated with FEM simulations. We have integrated graphene photodetectors with this material to obtain record photovoltage generation, with responsivity as high as A/W. As far as we know, this is the highest sensitivity obtained in any plasmonic-graphene hybrid photodetection system till date.

Paper Details

Date Published: 27 February 2015
PDF: 9 pages
Proc. SPIE 9371, Photonic and Phononic Properties of Engineered Nanostructures V, 93711G (27 February 2015); doi: 10.1117/12.2078859
Show Author Affiliations
Debadrita Paria, Indian Institute of Science (India)
Kallol Roy, Indian Institute of Science (India)
Shishir Kumar, Indian Institute of Science (India)
Haobijam Johnson Singh, Indian Institute of Science (India)
Srinivasan Raghavan, Indian Institute of Science (India)
Arindam Ghosh, Indian Institute of Science (India)
Ambarish Ghosh, Indian Institute of Science (India)

Published in SPIE Proceedings Vol. 9371:
Photonic and Phononic Properties of Engineered Nanostructures V
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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