We report a 40 Gb/s photoreceiver based on vertical-illumination type Ge-on-Si photodetectors and a silica-based AWG demultiplexer by employing 4-channel CWDM. The 60um-diameter Ge-on-Si photodetector arrays, grown on a bulk silicon wafer by RPCVD and fabricated with CMOS-compatible process, have ~0.9 A/W responsivity with 13 GHz bandwidth at λ ~ 1330nm. Ge-on-Si photodetector arrays are hybrid-integrated with TIA/LAs and directly-coupled to the AWG. The low-cost FPCB-package based photoreceiver module shows 10.3 Gb/s × 4-channel interconnection with -11 ~ -12.2 dBm sensitivity at a BER = 10^-12.

Date Published: 3 April 2015
PDF: 6 pages
Proc. SPIE 9368, Optical Interconnects XV, 93680C (3 April 2015); doi: 10.1117/12.2078844

Published in SPIE Proceedings Vol. 9368:
Optical Interconnects XV
Henning Schröder; Ray T. Chen, Editor(s)