Type-II light sources on InP substrate are an innovative concept for wavelengths ranging from 2 μm to the mid-IR. The concept is using the type-II band alignment between GaInAs and GaAsSb to exceed the limitation of type-I devices. Since the first demonstration of InP type-II heterostructure lasers above 2.3 μm in 2012, we have extended the emission wavelength to 2.7 μm. Furthermore, a drastic reduction in threshold current density down to 104 A/cm² per QW at infinite length was achieved (at 2.5 μm), which represents an improvement by more than a factor of two. Additionally CW operation up to 30°C and up to 80°C pulsed is presented. Furthermore, LEDs for 3.5μm peak emission wavelength and up to 86 μW output power are shown.

Date Published: 10 March 2015
PDF: 6 pages
Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820U (10 March 2015); doi: 10.1117/12.2078779

Published in SPIE Proceedings Vol. 9382:
Novel In-Plane Semiconductor Lasers XIV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)