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Proceedings Paper

InP-based type-II heterostructure lasers for wavelengths up to 2.7 um
Author(s): Stephan Sprengel; Ganpath Kumar Veerabathran; Alexander Andrejew; Anna Köninger; Gerhard Boehm; Christian Grasse; Markus-Christian Amann
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Paper Abstract

Type-II light sources on InP substrate are an innovative concept for wavelengths ranging from 2 μm to the mid-IR. The concept is using the type-II band alignment between GaInAs and GaAsSb to exceed the limitation of type-I devices. Since the first demonstration of InP type-II heterostructure lasers above 2.3 μm in 2012, we have extended the emission wavelength to 2.7 μm. Furthermore, a drastic reduction in threshold current density down to 104 A/cm2 per QW at infinite length was achieved (at 2.5 μm), which represents an improvement by more than a factor of two. Additionally CW operation up to 30°C and up to 80°C pulsed is presented. Furthermore, LEDs for 3.5μm peak emission wavelength and up to 86 μW output power are shown.

Paper Details

Date Published: 10 March 2015
PDF: 6 pages
Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820U (10 March 2015); doi: 10.1117/12.2078779
Show Author Affiliations
Stephan Sprengel, Technische Univ. München (Germany)
Ganpath Kumar Veerabathran, Technische Univ. München (Germany)
Alexander Andrejew, Technische Univ. München (Germany)
Anna Köninger, Technische Univ. München (Germany)
Gerhard Boehm, Technische Univ. München (Germany)
Christian Grasse, Technische Univ. München (Germany)
Markus-Christian Amann, Technische Univ. München (Germany)

Published in SPIE Proceedings Vol. 9382:
Novel In-Plane Semiconductor Lasers XIV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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