Share Email Print

Proceedings Paper

Impact of the carrier relaxation paths on two-state operation in quantum dot lasers
Author(s): G. S. Sokolovskii; V. V. Dudelev; E. D. Kolykhalova; Ksenya K. Soboleva; A. G. Deryagin; Innokenty I. Novikov; Mikhail V. Maximov; A. E. Zhukov; V. M. Ustinov; V. I. Kuchinskii; W. Sibbett; E. U. Rafailov; Evgeny A. Viktorov; T. Erneux
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We study InGaAs QD laser operating simultaneously at ground (GS) and excited (ES) states under 30ns pulsed-pumping and distinguish three regimes of operation depending on the pump current and the carrier relaxation pathways. An increased current leads to an increase in ES intensity and to a decrease in GS intensity (or saturation) for low pump range, as typical for the cascade-like pathway. Both the GS and ES intensities are steadily increased for high current ranges, which prove the dominance of the direct capture pathway. The relaxation oscillations are not pronounced for these ranges. For the mediate currents, the interplay between the both pathways leads to the damped large amplitude relaxation oscillations with significant deviation of the relaxation oscillation frequency from the initial value during the pulse.

Paper Details

Date Published: 16 March 2015
PDF: 6 pages
Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93570K (16 March 2015); doi: 10.1117/12.2078746
Show Author Affiliations
G. S. Sokolovskii, Ioffe Physical-Technical Institute (Russian Federation)
V. V. Dudelev, Ioffe Physical-Technical Institute (Russian Federation)
E. D. Kolykhalova, St. Petersburg State Electrotechnical Univ. (Russian Federation)
Ksenya K. Soboleva, Saint-Petersburg State Polytechnical Univ. (Russian Federation)
A. G. Deryagin, Ioffe Physical-Technical Institute (Russian Federation)
Innokenty I. Novikov, Ioffe Physical-Technical Institute (Russian Federation)
Mikhail V. Maximov, Ioffe Physical-Technical Institute (Russian Federation)
A. E. Zhukov, St. Petersburg Academic Univ. (Russian Federation)
V. M. Ustinov, Ioffe Physical-Technical Institute (Russian Federation)
V. I. Kuchinskii, Ioffe Physical-Technical Institute (Russian Federation)
W. Sibbett, Univ. of St. Andrews (United Kingdom)
E. U. Rafailov, Aston Univ. (United Kingdom)
Evgeny A. Viktorov, National Research Univ. of Information Technologies, Mechanics and Optics (Russian Federation)
Univ. Libre de Bruxelles (Belgium)
T. Erneux, Optique Nonlinéaire Théorique (Belgium)

Published in SPIE Proceedings Vol. 9357:
Physics and Simulation of Optoelectronic Devices XXIII
Bernd Witzigmann; Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?