We report the fabrication and characterization of GeSn waveguide structures on Si substrates grown by molecular beam epitaxy for efficient light-detection and emission. For photodetectors, GeSn waveguide structures exhibit a higher optical response compared to a reference Ge device as revealed by the photocurrent experiments. For light-emission, room-temperature photoluminescence experiments show a redshifted emission wavelength for the GeSn samples compared to the Ge reference sample due to the Sn incorporation. Besides, we observe ripple characteristics in the amplified spontaneous emission spectrum of the GeSn waveguide structure, which are attributed to the waveguide modes. Those results suggest that GeSn waveguide structures are promising for high-performance Si-based lightdetectors and emitters integrable with Si electronics.

Date Published: 27 February 2015
PDF: 6 pages
Proc. SPIE 9367, Silicon Photonics X, 93671G (27 February 2015); doi: 10.1117/12.2078675

Published in SPIE Proceedings Vol. 9367:
Silicon Photonics X
Graham T. Reed; Michael R. Watts, Editor(s)