
Proceedings Paper
Heading to 1 kW levels with laser bars of high-efficiency and emission wavelength around 880 nm and 940 nmFormat | Member Price | Non-Member Price |
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Paper Abstract
High-power quasi-CW laser bars are of great interest as pump sources of solid-state lasers generating high-energy ultrashort
pulses for high energy projects. These applications require a continuous improvement of the laser diodes for
reliable optical output powers and simultaneously high electrical-to-optical power efficiencies. An overview is presented
of recent progress at JENOPTIK in the development of commercial quasi-CW laser bars emitting around 880 nm and
940 nm optimized for peak performance.
At first, performances of 1.5 mm long laser bars with 75% fill-factor are presented. Both, 880 nm and 940 nm laser bars
deliver reliable power of 500 W with wall-plug-efficiencies (WPE) <55% within narrow beam divergence angles of 11°
and 45° in slow-axis and fast-axis directions, respectively. The reliability tests at 500 W powers under application quasi-
CW conditions are ongoing. Moreover, laser bars emitting at 880 nm tested under 100 μs current pulse duration deliver
1 kW output power at 0.9 kA with only a small degradation of the slope efficiency. The applications of 940 nm laser bars
require longer optical pulses and higher repetition rates (1-2 ms, ~10 Hz). In order to achieve output powers at the level
of 1 kW under such long pulse duration, heating of the laser active region has to be minimized. Power-voltage-current
characteristics of 4 mm long cavity bars with 50% fill-factor based on an optimized laser structure for strong carrier
confinement and low resistivity were measured. We report an output power of 0.8 kW at 0.8 A with <60% conversion
efficiency (52% WPE). By increasing the fill-factor of the bars a further improvement of the WPE at high currents is
expected.
Paper Details
Date Published: 13 March 2015
PDF: 10 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 93480E (13 March 2015); doi: 10.1117/12.2078642
Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)
PDF: 10 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 93480E (13 March 2015); doi: 10.1117/12.2078642
Show Author Affiliations
A. Pietrzak, JENOPTIK Diode Lab GmbH (Germany)
M. Woelz, JENOPTIK Diode Lab GmbH (Germany)
Ralf Huelsewede, JENOPTIK Diode Lab GmbH (Germany)
Martin Zorn, JENOPTIK Diode Lab GmbH (Germany)
Olaf Hirsekorn, JENOPTIK Diode Lab GmbH (Germany)
M. Woelz, JENOPTIK Diode Lab GmbH (Germany)
Ralf Huelsewede, JENOPTIK Diode Lab GmbH (Germany)
Martin Zorn, JENOPTIK Diode Lab GmbH (Germany)
Olaf Hirsekorn, JENOPTIK Diode Lab GmbH (Germany)
J. Meusel, JENOPTIK Laser GmbH (Germany)
A. Kindsvater, JENOPTIK Laser GmbH (Germany)
Matthias Schroeder, JENOPTIK Laser GmbH (Germany)
V. Bluemel, JENOPTIK Laser GmbH (Germany)
J. Sebastian, JENOPTIK Diode Lab GmbH (Germany)
A. Kindsvater, JENOPTIK Laser GmbH (Germany)
Matthias Schroeder, JENOPTIK Laser GmbH (Germany)
V. Bluemel, JENOPTIK Laser GmbH (Germany)
J. Sebastian, JENOPTIK Diode Lab GmbH (Germany)
Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)
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