We demonstrated a novel ultraviolet random lasing in a diamond nanoparticle film, in which above the threshold, several sharp peaks appeared at the center of spontaneous emission around 380 nm. In order to improve the lasing properties, we measured the annealing temperature dependence to examine the influence of the sp² layer on the surface of diamond nanoparticles, which was considered to quench the emission from a diamond body (sp³ diamond). From the results, we found that UV random lasing was able to observe in a diamond nanoparticle film when the annealing temperature was from 400 to 700 ˚C, although the lasing was hard to observe when the annealing temperature was below 300 ˚C. However, regardless of annealing temperature (above 400 ˚C), UV random lasing properties did not change, in which random lasing peaks clearly concentrated around the center of spontaneous emission and their thresholds were dispersed from several tens to several hundred MW/cm2. These results suggest that annealing at suitable temperature is important to induce UV random lasing, whereas random lasing properties (lasing wavelength, lasing threshold) do not change even if annealing temperature change from 400 to 700 ˚C.

Date Published: 20 February 2015
PDF: 6 pages
Proc. SPIE 9342, Solid State Lasers XXIV: Technology and Devices, 93420Q (20 February 2015); doi: 10.1117/12.2078629

Published in SPIE Proceedings Vol. 9342:
Solid State Lasers XXIV: Technology and Devices
W. Andrew Clarkson; Ramesh K. Shori, Editor(s)