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Proceedings Paper

Nanostructures under quantum-Hall conditions
Author(s): Vipin Srivastava
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Paper Abstract

It is suggested that 2D-electron-gas-systems, 500 nm wide and 100 ji m long, subjected to the conditions under which the quantum Hall-effect is observed, can behave like a 3osephson tunnel junction in that a phase-driven alternating current should exist between the two edge currents flowing parallel and anti-parallel to the longitudinal direction. Recent experimental results supporting this idea in low as well as in high frequency limits are discussed. The quenching of the Hall effect observed at low magnetic fields (around B=O) is shown to be the low frequency manifestation of this effect. Some newer experimental results at high values of B -- in the quantum-Hall regime -- show evidence of quantum interference arising out of the mixing of the edge currents by the high frequency phasedriven alternating currents.

Paper Details

Date Published: 1 October 1990
PDF: 10 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20786
Show Author Affiliations
Vipin Srivastava, Univ. of Hyderabad (India)

Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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