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Proceedings Paper

Microfabrication below 10 nm
Author(s): B. P. Van der Gaag; Axel Scherer; Lawrence M. Schiavone
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Paper Abstract

We describe a new electron beam lithography method for producing structures with lateral sizes smaller than the incident beam diameter. These patterns are transferred into GaAs/A1GaAs, InGaAs/GaAs and InGaAs/InP quantum well heterostructures using chemically assisted ion beam etching, thereby forming uniform arrays of pillars with lateral dimensions at or below 10 nm. To correlate the sizes of such structures with our exposure and development conditions, reflection electron microscopy observations are used.

Paper Details

Date Published: 1 October 1990
PDF: 9 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20785
Show Author Affiliations
B. P. Van der Gaag, Bell Communications Research (United States)
Axel Scherer, Bell Communications Research (United States)
Lawrence M. Schiavone, Bell Communications Research (United States)

Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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