Share Email Print

Proceedings Paper

Silicon wafer microstructure imaging using InfraRed Transport of Intensity Equation
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A novel quantitative 3D imaging system of silicon microstructures using InfraRed Transport of Intensity Equation (IRTIE) is proposed in this paper. By recording the intensity at multiple planes and using FFT or DCT based TIE solver, fast and accurate phase retrieval for both uniform and non-uniform intensity distributions is proposed. Numerical simulation and experiments confirm the accuracy and reliability of the proposed method. The application of IR-TIE for inspection of micro-patterns in visibly opaque media using 1310 nm light source is demonstrated. For comparison, micro-patterns are also inspected by the contact scanning mode Taylor Hobson system. Quantitative agreement suggests the possibility of using IR-TIE for phase imaging of silicon wafers.

Paper Details

Date Published: 4 March 2015
PDF: 5 pages
Proc. SPIE 9302, International Conference on Experimental Mechanics 2014, 93023I (4 March 2015); doi: 10.1117/12.2078579
Show Author Affiliations
Hongru Li, Sichuan Univ. (China)
Nanyang Technological Univ. (Singapore)
Guoying Feng, Sichuan Univ. (China)
Thomas Bourgade, Nanyang Technological Univ. (Singapore)
Chao Zuo, Nanyang Technological Univ. (Singapore)
Nanjing Univ. of Science and Technology (China)
Yongzhao Du, Sichuan Univ. (China)
Shouhuan Zhou, Sichuan Univ. (China)
Anand Asundi, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 9302:
International Conference on Experimental Mechanics 2014
Chenggen Quan; Kemao Qian; Anand Asundi; Fook Siong Chau, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?