
Proceedings Paper
Silicon photonic devices based on SOI/bulk-silicon platforms for chip-level optical interconnectsFormat | Member Price | Non-Member Price |
---|---|---|
$17.00 | $21.00 |
Paper Abstract
Based on either a SOI wafer or a bulk-silicon wafer, we discuss silicon photonic devices and integrations for chip-level
optical interconnects. We present the low-voltage silicon PICs on a SOI wafer, where Si modulators and Ge-on-Si
photodetectors are monolithically-integrated for intra-chip or inter-chip interconnects over 40 Gb/s. For future chip-level
integration, the 50 Gb/s small-sized depletion-type MZ modulator with the vertically-dipped PN-depletion-junction
(VDJ) is also presented. We report vertical-illumination-type Ge photodetectors on bulk-silicon wafers, with high
performances up to 50 Gb/s. We present the bulk-silicon platform for practical implementation of chip-level
interconnects, and the performance of the photonic transceiver silicon chip.
Paper Details
Date Published: 3 April 2015
PDF: 7 pages
Proc. SPIE 9368, Optical Interconnects XV, 93680Z (3 April 2015); doi: 10.1117/12.2078493
Published in SPIE Proceedings Vol. 9368:
Optical Interconnects XV
Henning Schröder; Ray T. Chen, Editor(s)
PDF: 7 pages
Proc. SPIE 9368, Optical Interconnects XV, 93680Z (3 April 2015); doi: 10.1117/12.2078493
Show Author Affiliations
Gyungock Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
In Gyoo Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Sanghoon Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Jiho Joo, Electronics and Telecommunications Research Institute (Korea, Republic of)
Ki-Seok Jang, Electronics and Telecommunications Research Institute (Korea, Republic of)
Sun Ae Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Jin Hyuk Oh, Electronics and Telecommunications Research Institute (Korea, Republic of)
In Gyoo Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Sanghoon Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Jiho Joo, Electronics and Telecommunications Research Institute (Korea, Republic of)
Ki-Seok Jang, Electronics and Telecommunications Research Institute (Korea, Republic of)
Sun Ae Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Jin Hyuk Oh, Electronics and Telecommunications Research Institute (Korea, Republic of)
Jeong Woo Park, Electronics and Telecommunications Research Institute (Korea, Republic of)
Myung-Joon Kwack, Electronics and Telecommunications Research Institute (Korea, Republic of)
Jaegyu Park, Electronics and Telecommunications Research Institute (Korea, Republic of)
Hyundai Park, Electronics and Telecommunications Research Institute (Korea, Republic of)
Gun Sik Park, Electronics and Telecommunications Research Institute (Korea, Republic of)
Sanggi Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Myung-Joon Kwack, Electronics and Telecommunications Research Institute (Korea, Republic of)
Jaegyu Park, Electronics and Telecommunications Research Institute (Korea, Republic of)
Hyundai Park, Electronics and Telecommunications Research Institute (Korea, Republic of)
Gun Sik Park, Electronics and Telecommunications Research Institute (Korea, Republic of)
Sanggi Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Published in SPIE Proceedings Vol. 9368:
Optical Interconnects XV
Henning Schröder; Ray T. Chen, Editor(s)
© SPIE. Terms of Use
