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Proceedings Paper

Semiconductor defect metrology using laser-based quantitative phase imaging
Author(s): Renjie Zhou; Chris Edwards; Gabriel Popescu; Lynford Goddard
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Paper Abstract

A highly sensitive laser-based quantitative phase imaging tool, using an epi-illumination diffraction phase microscope, has been developed for silicon wafer defect inspection. The first system used a 532 nm solid-state laser and detected 20 nm by 100 nm by 110 nm defects in a 22 nm node patterned silicon wafer. The second system, using a 405 nm diode laser, is more sensitive and has enabled detection of 15 nm by 90 nm by 35 nm defects in a 9 nm node densely patterned silicon wafer. In addition to imaging, wafer scanning and image-post processing are also crucial for defect detection.

Paper Details

Date Published: 11 March 2015
PDF: 6 pages
Proc. SPIE 9336, Quantitative Phase Imaging, 93361I (11 March 2015); doi: 10.1117/12.2078329
Show Author Affiliations
Renjie Zhou, Univ. of Illinois at Urbana-Champaign (United States)
Massachusetts Institute of Technology (United States)
Chris Edwards, Univ. of Illinois at Urbana-Champaign (United States)
Gabriel Popescu, Univ. of Illinois at Urbana-Champaign (United States)
Lynford Goddard, Univ. of Illinois at Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 9336:
Quantitative Phase Imaging
Gabriel Popescu; YongKeun Park, Editor(s)

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