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Proceedings Paper

Nitride heterostructure influence on efficiency droop
Author(s): Oleg Rabinovich; Sergei Didenko; Sergei Legotin
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Paper Abstract

The influence of nitride heterostructures on efficiency droop is presented. It was developed a special method based on simulation for investigating the changes in the semiconductor devices characteristics due to different influencing factors. The cause of efficiency droop was detected - large difference in carrier lifetimes. The simulation results are used to suggest several ways for improving LED efficiency about 12 %.

Paper Details

Date Published: 9 March 2015
PDF: 6 pages
Proc. SPIE 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX, 938310 (9 March 2015); doi: 10.1117/12.2078317
Show Author Affiliations
Oleg Rabinovich, National Univ. of Science and Technology MISiS (Russian Federation)
Sergei Didenko, National Univ. of Science and Technology "MISiS" (Russian Federation)
Sergei Legotin, National Univ. of Science and Technology "MISiS" (Russian Federation)


Published in SPIE Proceedings Vol. 9383:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)

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