980 nm GaAs-based photonic crystal surface emitting lasers containing all semiconductor GaAs/InGaP and GaAs/air photonic crystals (PC) inside their cavity are theoretically investigated. We use a combination of an average index approach and optical coupled mode theory to optimize the PC interaction with optical modes of the laser waveguide and draw guidelines for design of PCSELs based on a range of material systems and operating wavelengths. Results show that the all-semiconductor PC provides a higher coupling with the optical mode in most cases.

Date Published: 10 March 2015
PDF: 8 pages
Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93821A (10 March 2015); doi: 10.1117/12.2078245

Published in SPIE Proceedings Vol. 9382:
Novel In-Plane Semiconductor Lasers XIV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)