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Proceedings Paper

High-power photodetector modules for microwave photonic applications
Author(s): Kejia Li; Xiaojun Xie; Efthymios Rouvalis; Sascha Fedderwitz; Andreas G. Steffan; Qinglong Li; Zhanyu Yang; Andreas Beling; Joe C. Campbell
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Paper Abstract

Recently, microwave photonic techniques have emerged to address the challenges that microwave systems face under high-frequency or wideband conditions. To a large extent, the performance of microwave photonic systems depends on the performance of individual optoelectronics devices, such as high power photodiodes. Here, we report a fullypackaged photodetector module based on InGaAs/InP modified uni-traveling carrier (MUTC) photodiode. The modules demonstrated a 3-dB bandwidth up to 50GHz and a record-high output power of 14.0 dBm at 50GHz.

Paper Details

Date Published: 14 March 2015
PDF: 6 pages
Proc. SPIE 9362, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VIII, 93620X (14 March 2015); doi: 10.1117/12.2078214
Show Author Affiliations
Kejia Li, Univ. of Virginia (United States)
Xiaojun Xie, Univ. of Virginia (United States)
Efthymios Rouvalis, Finisar Corp. (Germany)
Sascha Fedderwitz, Finisar Corp. (Germany)
Andreas G. Steffan, Finisar Corp. (Germany)
Qinglong Li, Univ. of Virginia (United States)
Zhanyu Yang, Univ. of Virginia (United States)
Andreas Beling, Univ. of Virginia (United States)
Joe C. Campbell, Univ. of Virginia (United States)

Published in SPIE Proceedings Vol. 9362:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VIII
Laurence P. Sadwick; Tianxin Yang, Editor(s)

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