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Proceedings Paper

Einstein relation in quantum wires of small-gap materials in the presence of crossed electric and magnetic fields
Author(s): Kamakhya Prasad Ghatak; Manabendra Mondal; Sankar Bhattacharyya
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Paper Abstract

An attempt is made to study the Einstein relation for the diffuaivlty-mobility ratio of the electron in quantum well wires of Small-gap Semiconductors in the preaence of crossed electric and magnetic fields on the basis of a newly derived electron energy spectrum considering all types anisotropies in the band parameters. It is found taking n-CdGeAs as an example that, the same ratio increases with electron concentration and electric field in an oscillatory way. Besides, it decreases with thickness and the crystal field parameter Influence sinifigantly the ratio in the whole range of variables considered. We have also suggested an experimental method of determining the Einstein relation in degenerate materials having arbitrary dispersion law. The expression for quanturn well wires of parabolic semi-conductors are also obtained from our generalised expressions derived in the absence of cross field configuration.

Paper Details

Date Published: 1 October 1990
PDF: 14 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20780
Show Author Affiliations
Kamakhya Prasad Ghatak, Jadavpur Univ. (India)
Manabendra Mondal, Y.S. Palpara College (India)
Sankar Bhattacharyya, ITC Ltd. (India)

Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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