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Proceedings Paper

Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes
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Paper Abstract

For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail.

Paper Details

Date Published: 13 March 2015
PDF: 8 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632B (13 March 2015); doi: 10.1117/12.2077946
Show Author Affiliations
Fang-Ming Chen, National Changhua Univ. of Education (Taiwan)
Jih-Yuan Chang, Kuang-Ming Junior High School (Taiwan)
Yen-Kuang Kuo, National Changhua Univ. of Education (Taiwan)
Bing-Cheng Lin, National Chiao Tung Univ. (Taiwan)
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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