Proceedings Paper
Novel electron-diffraction transistor| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
Recent reports of very long electron mean free paths have raised the prospect of electronic devices operating on the
basis of wave principles standard in physical optics. Such "optical" electron devices could be created within the 2DEG
of a HEMT structure. We report here modeling of a proposed device which utilizes electron diffraction to perform
several interesting functions, underscoring the potential multifunctionailty of quantum devices.
Paper Details
Date Published: 1 October 1990
PDF: 10 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20778
Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)
PDF: 10 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20778
Show Author Affiliations
Gary H. Bernstein, Univ. of Notre Dame (United States)
Alfred M. Kriman, Arizona State Univ. (United States)
Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)
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