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Proceedings Paper

Si based GeSn light emitter: mid-infrared devices in Si photonics
Author(s): S. Q. Yu; S. A. Ghetmiri; W. Du; J. Margetis; Y. Zhou; Aboozar Mosleh; S. Al-Kabi; A. Nazzal; G. Sun; Richard A. Soref; J. Tolle; B. Li; H. A. Naseem
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Paper Abstract

Ge1-xSnx/Ge thin films and Ge/Ge1-xSnx/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10% Sn LED under the injection current density of 800 A/cm2.

Paper Details

Date Published: 27 February 2015
PDF: 8 pages
Proc. SPIE 9367, Silicon Photonics X, 93670R (27 February 2015); doi: 10.1117/12.2077778
Show Author Affiliations
S. Q. Yu, Univ. of Arkansas (United States)
S. A. Ghetmiri, Univ. of Arkansas (United States)
W. Du, Univ. of Arkansas (United States)
J. Margetis, ASM America Inc. (United States)
Y. Zhou, Univ. of Arkansas (United States)
Aboozar Mosleh, Univ. of Arkansas (United States)
S. Al-Kabi, Univ. of Arkansas (United States)
A. Nazzal, Wilkes Univ. (United States)
G. Sun, Univ. of Massachusetts Boston (United States)
Richard A. Soref, Univ. of Massachusetts Boston (United States)
J. Tolle, ASM America Inc. (United States)
B. Li, Arktonics, LLC (United States)
H. A. Naseem, Univ. of Arkansas (United States)

Published in SPIE Proceedings Vol. 9367:
Silicon Photonics X
Graham T. Reed; Michael R. Watts, Editor(s)

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