Share Email Print

Proceedings Paper

Temperature dependent carrier lifetime measurements of InAs/InAsSb T2SLs
Author(s): Y. Aytac; B. V. Olson; J. K. Kim; E. A. Shaner; S. D. Hawkins; J. F. Klem; M. E. Flatté; T. F. Boggess
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Temperature dependent measurements of carrier recombination rates using a time-resolved pump-probe technique are reported for mid-wave infrared InAs/InAsSb type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions a 16 K band-gap of ~235 ± 10meV was achieved for four doped and five undoped T2SLs. Carrier lifetimes were determined by fitting lifetime models of Shockley-Read-Hall (SRH), radiative, and Auger recombination processes simultaneously to the temperature and excess carrier density dependent data. The contribution of each recombination process at a given temperature is identified and the total lifetime is determined over a range of excess carrier densities. The minority carrier and Auger lifetimes were observed to increase with increasing antimony content and decreasing layer thickness for the undoped T2SLs. It is hypothesized that a reduction in SRH recombination centers or a shift in the SRH defect energy relative to the T2SL band edges is the cause of this increase in the SRH minority carrier lifetime. The lower Auger coefficients are attributed to a reduced number of final Auger states in the SL samples with greater antimony content. An Auger limited minority carrier lifetime is observed for the doped T2SLs, and it is found to be a factor of ten shorter than for undoped T2SLs. The Auger rates for all the InAs/InAsSb T2SLs were significantly larger than those previously reported for InAs/GaSb T2SLs.

Paper Details

Date Published: 8 February 2015
PDF: 8 pages
Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 93700J (8 February 2015); doi: 10.1117/12.2077753
Show Author Affiliations
Y. Aytac, The Univ. of Iowa (United States)
B. V. Olson, Sandia National Labs. (United States)
J. K. Kim, Sandia National Labs. (United States)
E. A. Shaner, Sandia National Labs. (United States)
S. D. Hawkins, Sandia National Labs. (United States)
J. F. Klem, Sandia National Labs. (United States)
M. E. Flatté, The Univ. of Iowa (United States)
T. F. Boggess, The Univ. of Iowa (United States)

Published in SPIE Proceedings Vol. 9370:
Quantum Sensing and Nanophotonic Devices XII
Manijeh Razeghi; Eric Tournié; Gail J. Brown, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?