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Proceedings Paper

Dual-wavelength GaInNAs semiconductor quantum-well distributed feedback laser
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Paper Abstract

Incorporation of N into GaInAs results in N-localized-states close to the conduction band minimum. Such strong alloy band edge N-localized-states can locally capture carriers, thus lasing directly occurs from them, leading to dualwavelength emission.

Paper Details

Date Published: 16 March 2015
PDF: 8 pages
Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93570D (16 March 2015); doi: 10.1117/12.2077646
Show Author Affiliations
Xiao Sun, Alcatel-Lucent Shanghai Bell Co. Ltd. (China)
Qingjiang Chang, Alcatel-Lucent Shanghai Bell Co. Ltd. (China)


Published in SPIE Proceedings Vol. 9357:
Physics and Simulation of Optoelectronic Devices XXIII
Bernd Witzigmann; Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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