
Proceedings Paper
Assessment of high-power kW-class single-diode bars for use in highly efficient pulsed solid state laser systemsFormat | Member Price | Non-Member Price |
---|---|---|
$17.00 | $21.00 |
Paper Abstract
In this work, we present measurements of efficiency-optimized 940 nm diode laser bars with long resonators that are
constructed with robustly passivated output facets at the Ferdinand-Braun-Institut (FBH). The measurements were
performed at room temperature on a test bench developed at HiLASE Centre, as a function of operating condition. The
single-diode bars generated < 1.0 kW when tested with 1 ms pulses at 1-10Hz operating frequency, corresponding to < 1
J per pulse. The maximum electrical-to-optical efficiency was < 60 %, with operating efficiency at 1 kW of < 50%,
limited by the ~ 200 μΩ resistance of the bar packaging. In addition, slow axis divergence at 1 kW was below 6° FWHM
and spectral width at 1 kW was below 7 nm FWHM, as needed for pumping Yb-doped solid state amplifier crystals.
Paper Details
Date Published: 13 March 2015
PDF: 7 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 934811 (13 March 2015); doi: 10.1117/12.2077558
Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)
PDF: 7 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 934811 (13 March 2015); doi: 10.1117/12.2077558
Show Author Affiliations
Antonio Lucianetti, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Jan Pilar, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Czech Technical Univ. in Prague (Czech Republic)
Alina Pranovich, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Czech Technical Univ. in Prague (Czech Republic)
Martin Divoky, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Tomas Mocek, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
K. Ertel, STFC Rutherford Appleton Lab. (United Kingdom)
Jan Pilar, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Czech Technical Univ. in Prague (Czech Republic)
Alina Pranovich, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Czech Technical Univ. in Prague (Czech Republic)
Martin Divoky, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Tomas Mocek, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
K. Ertel, STFC Rutherford Appleton Lab. (United Kingdom)
Helena Jelinkova, Czech Technical Univ. in Prague (Czech Republic)
P. Crump, Ferdinand-Braun-Institut (Germany)
C. Frevert, Ferdinand-Braun-Institut (Germany)
R. Staske, Ferdinand-Braun-Institut (Germany)
Götz Erbert, Ferdinand-Braun-Institut (Germany)
Günther Traenkle, Ferdinand-Braun-Institut (Germany)
P. Crump, Ferdinand-Braun-Institut (Germany)
C. Frevert, Ferdinand-Braun-Institut (Germany)
R. Staske, Ferdinand-Braun-Institut (Germany)
Götz Erbert, Ferdinand-Braun-Institut (Germany)
Günther Traenkle, Ferdinand-Braun-Institut (Germany)
Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)
© SPIE. Terms of Use
