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Proceedings Paper

Mask aligner lithography for TSV-structures using a double-sided (structured) photomask
Author(s): T. Weichelt; L. Stuerzebecher; U. D. Zeitner
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Paper Abstract

Through-silicon vias (TSV) are important for wafer level packaging (WLP) as they provide patterning holes through thick silicon dies to integrate and interconnect devices which are stacked in z-direction. For economic processing TSV fabrication primarily needs to be cost-effective including especially a high throughput. Furthermore, a lithography process for TSV has to be stable enough to allow patterning on pre-structured substrates with inhomogeneous topography. This can be addressed by an exposure process which offers a large depth of focus. We have developed a mask-aligner lithography process based on the use of a double-sided photomask to realize aerial images which meet these constraints.

Paper Details

Date Published: 13 March 2015
PDF: 6 pages
Proc. SPIE 9374, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VIII, 93740X (13 March 2015); doi: 10.1117/12.2077550
Show Author Affiliations
T. Weichelt, Friedrich-Schiller-Univ. Jena (Germany)
L. Stuerzebecher, Friedrich-Schiller-Univ. Jena (Germany)
U. D. Zeitner, Friedrich-Schiller-Univ. Jena (Germany)
Fraunhofer-Institut für Angewandte Optik und Feinmechanik (Germany)

Published in SPIE Proceedings Vol. 9374:
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VIII
Georg von Freymann; Winston V. Schoenfeld; Raymond C. Rumpf; Henry Helvajian, Editor(s)

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