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Proceedings Paper

Defects in GaN-based LEDs: impact on internal quantum efficiency and on reliability
Author(s): M. Meneghini; C. De Santi; M. La Grassa; N. Trivellin; D. Barbisan; M. Ferretti; G. Meneghesso; E. Zanoni
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Paper Abstract

This paper reviews the properties of the defects which limit the performance and the reliability of LEDs based on InGaN. More specifically we discuss: (i) the origin and properties of the defects responsible for SRH recombination; (ii) the role of defects in favoring the degradation of InGaN-based LEDs. Original data are compared to previous literature reports to provide a clear understanding of the topic.

Paper Details

Date Published: 9 March 2015
PDF: 7 pages
Proc. SPIE 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX, 93830G (9 March 2015); doi: 10.1117/12.2077461
Show Author Affiliations
M. Meneghini, Univ. degli Studi di Padova (Italy)
C. De Santi, Univ. degli Studi di Padova (Italy)
M. La Grassa, Univ. degli Studi di Padova (Italy)
N. Trivellin, Univ. degli Studi di Padova (Italy)
D. Barbisan, Univ. degli Studi di Padova (Italy)
M. Ferretti, Univ. degli Studi di Padova (Italy)
G. Meneghesso, Univ. degli Studi di Padova (Italy)
E. Zanoni, Univ. degli Studi di Padova (Italy)


Published in SPIE Proceedings Vol. 9383:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)

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