
Proceedings Paper
Temperature influence on diode pumped Er:CaF2 laserFormat | Member Price | Non-Member Price |
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Paper Abstract
The goal of this work was an investigation of the temperature influence (in range from 80 up to 330 K) on the
laser properties of Er:CaF2 ceramics, which is suitable as a gain medium for generation of radiation at 2.7 μm.
The tested Er:CaF2 ceramics sample, prepared using a hot-forming technique, was doped with 5.5% of ErF3. The
sample was in the form of plane-parallel face-polished 5.8mm thick plate (without AR-coatings). It was mounted
in a temperature controlled cupreous holder, placed inside the vacuum chamber of the liquid nitrogen cryostat.
A fiber coupled laser diode, operating in pulsed regime (3 ms pulse length, 20 Hz repetition rate) at wavelength
968 nm, was used for Er:CaF2 sample pumping. The 145mm long semi-hemispherical laser resonator consisted
of a flat pumping mirror (HR @ 2.65 − 2.95 μm, HT @ 0.97 μm) and a curved (r = 150mm) output coupler
with a reflectivity of ∼ 97% @ 2.65 − 2.85 μm. From the results it follows that the temperature of the active
medium has a strong influence mainly on laser threshold (more than 8 times lower threshold power corresponded
to the temperature 80K in respect to 330 K). The highest slope efficiency (2.3% in respect to absorbed power),
obtained for the temperature 80 K, was more than twice higher than the slope efficiency for 330 K.
Paper Details
Date Published: 20 February 2015
PDF: 8 pages
Proc. SPIE 9342, Solid State Lasers XXIV: Technology and Devices, 93421S (20 February 2015); doi: 10.1117/12.2077454
Published in SPIE Proceedings Vol. 9342:
Solid State Lasers XXIV: Technology and Devices
W. Andrew Clarkson; Ramesh K. Shori, Editor(s)
PDF: 8 pages
Proc. SPIE 9342, Solid State Lasers XXIV: Technology and Devices, 93421S (20 February 2015); doi: 10.1117/12.2077454
Show Author Affiliations
Jan Šulc, Czech Technical Univ. in Prague (Czech Republic)
Richard Švejkar, Czech Technical Univ. in Prague (Czech Republic)
Michal Němec, Czech Technical Univ. in Prague (Czech Republic)
Helena Jelínková, Czech Technical Univ. in Prague (Czech Republic)
Richard Švejkar, Czech Technical Univ. in Prague (Czech Republic)
Michal Němec, Czech Technical Univ. in Prague (Czech Republic)
Helena Jelínková, Czech Technical Univ. in Prague (Czech Republic)
Maxim E. Doroshenko, A. M. Prokhorov General Physics Institute (Russian Federation)
Pavel P. Fedorov, A. M. Prokhorov General Physics Institute (Russian Federation)
Vyacheslav V. Osiko, A. M. Prokhorov General Physics Institute (Russian Federation)
Pavel P. Fedorov, A. M. Prokhorov General Physics Institute (Russian Federation)
Vyacheslav V. Osiko, A. M. Prokhorov General Physics Institute (Russian Federation)
Published in SPIE Proceedings Vol. 9342:
Solid State Lasers XXIV: Technology and Devices
W. Andrew Clarkson; Ramesh K. Shori, Editor(s)
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