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Proceedings Paper

High-power UV-B LEDs with long lifetime
Author(s): Jens Rass; Tim Kolbe; Neysha Lobo-Ploch; Tim Wernicke; Frank Mehnke; Christian Kuhn; Johannes Enslin; Martin Guttmann; Christoph Reich; Anna Mogilatenko; Johannes Glaab; Christoph Stoelmacker; Mickael Lapeyrade; Sven Einfeldt; Markus Weyers; Michael Kneissl
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Paper Abstract

UV light emitters in the UV-B spectral range between 280 nm and 320 nm are of great interest for applications such as phototherapy, gas sensing, plant growth lighting, and UV curing. In this paper we present high power UV-B LEDs grown by MOVPE on sapphire substrates. By optimizing the heterostructure design, growth parameters and processing technologies, significant progress was achieved with respect to internal efficiency, injection efficiency and light extraction. LED chips emitting at 310 nm with maximum output powers of up to 18 mW have been realized. Lifetime measurements show approximately 20% decrease in emission power after 1,000 operating hours at 100 mA and 5 mW output power and less than 30% after 3,500 hours of operation, thus indicating an L50 lifetime beyond 10,000 hours.

Paper Details

Date Published: 13 March 2015
PDF: 13 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631K (13 March 2015); doi: 10.1117/12.2077426
Show Author Affiliations
Jens Rass, Ferdinand-Braun-Institut (Germany)
Technische Univ. Berlin (Germany)
Tim Kolbe, Ferdinand-Braun-Institut (Germany)
Technische Univ. Berlin (Germany)
Neysha Lobo-Ploch, Ferdinand-Braun-Institut (Germany)
Leibniz-Institut für Höchstfrequenztechnik (Germany)
Tim Wernicke, Technische Univ. Berlin (Germany)
Frank Mehnke, Technische Univ. Berlin (Germany)
Christian Kuhn, Technische Univ. Berlin (Germany)
Johannes Enslin, Technische Univ. Berlin (Germany)
Martin Guttmann, Technische Univ. Berlin (Germany)
Christoph Reich, Technische Univ. Berlin (Germany)
Anna Mogilatenko, Ferdinand-Braun-Institut (Germany)
Johannes Glaab, Ferdinand-Braun-Institut (Germany)
Leibniz-Institut für Höchstfrequenztechnik (Germany)
Christoph Stoelmacker, Ferdinand-Braun-Institut (Germany)
Mickael Lapeyrade, Ferdinand-Braun-Institut (Germany)
Sven Einfeldt, Ferdinand-Braun-Institut (Germany)
Leibniz-Institut für Höchstfrequenztechnik (Germany)
Markus Weyers, Ferdinand-Braun-Institut (Germany)
Michael Kneissl, Ferdinand-Braun-Institut (Germany)
Technische Univ. Berlin (Germany)

Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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