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Proceedings Paper

Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission
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Paper Abstract

Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000–1260 nm, Original band: 1260–1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

Paper Details

Date Published: 16 March 2015
PDF: 7 pages
Proc. SPIE 9359, Optical Components and Materials XII, 93591E (16 March 2015); doi: 10.1117/12.2077346
Show Author Affiliations
Naokatsu Yamamoto, National Institute of Information and Communications Technology (Japan)
Kouichi Akahane, National Institute of Information and Communications Technology (Japan)
Toshimasa Umezawa, National Institute of Information and Communications Technology (Japan)
Tetsuya Kawanishi, National Institute of Information and Communications Technology (Japan)

Published in SPIE Proceedings Vol. 9359:
Optical Components and Materials XII
Shibin Jiang; Michel J. F. Digonnet, Editor(s)

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