We report modeling and experimental results that demonstrate mechanisms limiting the output power of semiconductor lasers and a method experimentally yielding a dramatic increase of the maximum continuous wave output power. Unfolded cavity is used to achieve higher power and efficiency by improving the alignment between the carrier and photon density profiles in a long cavity device. This method offers reduced longitudinal spatial hole burning (LSHB) and lower photon density inside the laser cavity; therefore, it decreases possible LSHB and non-linear effects that could limit the output power of a semiconductor laser. We have demonstrated 29.5W output from 5.7mm long and 100um wide waveguide at 9xx nm using an unfolded cavity. A semiconductor laser with an unfolded cavity allows scaling of the output power by increasing the cavity length.

Date Published: 13 March 2015
PDF: 6 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 93480G (13 March 2015); doi: 10.1117/12.2077342

Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)