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Raman gain of SiC as a potential medium for Raman lasers
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Paper Abstract

We have investigated stimulated Raman scattering in the 4H polytype of SiC, due to its excellent thermal conductivity which is of great importance for power scaling of Raman lasers. Spectroscopy verifies the sample’s polytype and precludes any significant admixture of other polytypes. Tests indicate the moderate optical quality of this commercially available sample. Using pump-probe measurements around 1030 nm, we find the Raman gain coefficient of the major peak at 777 cm-1 to be 0.46 cm/GW. Although this value is only modest, calculations and experience with other Raman materials indicate that Raman lasing of 4H SiC should be possible with reasonable intensities of 1064-nm pulsed pumping.

Paper Details

Date Published: 16 March 2015
PDF: 6 pages
Proc. SPIE 9359, Optical Components and Materials XII, 935904 (16 March 2015); doi: 10.1117/12.2077299
Show Author Affiliations
Larry D. Merkle, U.S. Army Research Lab. (United States)
Jun Zhang, U.S. Army Research Lab. (United States)
Graham Allen, Lawrence Livermore National Lab. (United States)
Jay W. Dawson, Lawrence Livermore National Lab. (United States)
Mark Dubinskii, U.S. Army Research Lab. (United States)

Published in SPIE Proceedings Vol. 9359:
Optical Components and Materials XII
Shibin Jiang; Michel J. F. Digonnet, Editor(s)

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