Proceedings Paper
2.2um BSI CMOS image sensor with two layer photo-detector| Format | Member Price | Non-Member Price |
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Paper Abstract
Back Side Illumination (BSI) CMOS image sensors with two-layer photo detectors (2LPDs) have been fabricated and evaluated. The test pixel array has green pixels (2.2um x 2.2um) and a magenta pixel (2.2um x 4.4um). The green pixel has a single-layer photo detector (1LPD). The magenta pixel has a 2LPD and a vertical charge transfer (VCT) path to contact a back side photo detector. The 2LPD and the VCT were implemented by high-energy ion implantation from the circuit side. Measured spectral response curves from the 2LPDs fitted well with those estimated based on light-absorption theory for Silicon detectors. Our measurement results show that the keys to realize the 2LPD in BSI are; (1) the reduction of crosstalk to the VCT from adjacent pixels and (2) controlling the backside photo detector thickness variance to reduce color signal variations.
Paper Details
Date Published: 13 March 2015
PDF: 6 pages
Proc. SPIE 9403, Image Sensors and Imaging Systems 2015, 940302 (13 March 2015); doi: 10.1117/12.2077122
Published in SPIE Proceedings Vol. 9403:
Image Sensors and Imaging Systems 2015
Ralf Widenhorn; Antoine Dupret, Editor(s)
PDF: 6 pages
Proc. SPIE 9403, Image Sensors and Imaging Systems 2015, 940302 (13 March 2015); doi: 10.1117/12.2077122
Show Author Affiliations
H. Sasaki, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
A. Mochizuki, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
Y. Sugiura, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
R. Hasumi, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
K. Eda, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
Y. Egawa, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
H. Yamashita, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
A. Mochizuki, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
Y. Sugiura, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
R. Hasumi, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
K. Eda, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
Y. Egawa, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
H. Yamashita, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
K. Honda, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
T. Ohguro, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
H. S. Momose, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
H. Ootani, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
Y. Toyoshima, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
T. Asami, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
T. Ohguro, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
H. S. Momose, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
H. Ootani, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
Y. Toyoshima, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
T. Asami, Toshiba Corp. Semiconductor & Storage Products Co. (Japan)
Published in SPIE Proceedings Vol. 9403:
Image Sensors and Imaging Systems 2015
Ralf Widenhorn; Antoine Dupret, Editor(s)
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