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Proceedings Paper

Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications
Author(s): Sulakshna Kumari; Johan S. Gustavsson; Ruijun Wang; Emanuel P. Haglund; Petter Westbergh; Dorian Sanchez; Erik Haglund; Åsa Haglund; Jörgen Bengtsson; Nicolas Le Thomas; Gunther Roelkens; Anders Larsson; Roel G. Baets
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Paper Abstract

We present a GaAs-based VCSEL structure, BCB bonded to a Si3N4 waveguide circuit, where one DBR is substituted by a free-standing Si3N4 high-contrast-grating (HCG) reflector realized in the Si3N4 waveguide layer. This design enables solutions for on-chip spectroscopic sensing, and the dense integration of 850-nm WDM data communication transmitters where individual channel wavelengths are set by varying the HCG parameters. RCWA shows that a 300nm-thick Si3N4 HCG with 800nm period and 40% duty cycle reflects strongly (<99%) over a 75nm wavelength range around 850nm. A design with a standing-optical-field minimum at the III-V/airgap interface maximizes the HCG’s influence on the VCSEL wavelength, allowing for a 15-nm-wide wavelength setting range with low threshold gain (<1000 cm-1).

Paper Details

Date Published: 27 February 2015
PDF: 7 pages
Proc. SPIE 9372, High Contrast Metastructures IV, 93720U (27 February 2015); doi: 10.1117/12.2077090
Show Author Affiliations
Sulakshna Kumari, Univ. Gent (Belgium)
Johan S. Gustavsson, Chalmers Univ. of Technology (Sweden)
Ruijun Wang, Univ. Gent (Belgium)
Emanuel P. Haglund, Chalmers Univ. of Technology (Sweden)
Petter Westbergh, Chalmers Univ. of Technology (Sweden)
Dorian Sanchez, Univ. Gent (Belgium)
Erik Haglund, Chalmers Univ. of Technology (Sweden)
Åsa Haglund, Chalmers Univ. of Technology (Sweden)
Jörgen Bengtsson, Chalmers Univ. of Technology (Sweden)
Nicolas Le Thomas, Univ. Gent (Belgium)
Gunther Roelkens, Univ. Gent (Belgium)
Anders Larsson, Chalmers Univ. of Technology (Sweden)
Roel G. Baets, Univ. Gent (Belgium)
IMEC (Belgium)

Published in SPIE Proceedings Vol. 9372:
High Contrast Metastructures IV
Connie J. Chang-Hasnain; David Fattal; Fumio Koyama; Weimin Zhou, Editor(s)

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