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Proceedings Paper

Identification of point defects in HVPE-grown GaN by steady-state and time-resolved photoluminescence
Author(s): M. A. Reshchikov; D. O. Demchenko; A. Usikov; H. Helava; Yu. Makarov
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Paper Abstract

We have investigated point defects in GaN grown by HVPE by using steady-state and time-resolved photoluminescence (PL). Among the most common PL bands in this material are the red luminescence band with a maximum at 1.8 eV and a zero-phonon line (ZPL) at 2.36 eV (attributed to an unknown acceptor having an energy level 1.130 eV above the valence band), the blue luminescence band with a maximum at 2.9 eV (attributed to ZnGa), and the ultraviolet luminescence band with the main peak at 3.27 eV (related to an unknown shallow acceptor). In GaN with the highest quality, the dominant defect-related PL band at high excitation intensity is the green luminescence band with a maximum at about 2.4 eV. We attribute this band to transitions of electrons from the conduction band to the 0/+ level of the isolated CN defect. The yellow luminescence (YL) band, related to transitions via the −/0 level of the same defect, has a maximum at 2.1 eV. Another yellow luminescence band, which has similar shape but peaks at about 2.2 eV, is observed in less pure GaN samples and is attributed to the CNON complex. In semi-insulating GaN, the GL2 band with a maximum at 2.35 eV (attributed to VN) and the BL2 band with a maximum at 3.0 eV and the ZPL at 3.33 eV (attributed to a defect complex involving hydrogen) are observed. We also conclude that the gallium vacancy-related defects act as centers of nonradiative recombination.

Paper Details

Date Published: 13 March 2015
PDF: 7 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630L (13 March 2015); doi: 10.1117/12.2077002
Show Author Affiliations
M. A. Reshchikov, Virginia Commonwealth Univ. (United States)
D. O. Demchenko, Virginia Commonwealth Univ. (United States)
A. Usikov, Nitride Crystals, Inc. (United States)
National Research Univ. of Information Technologies, Mechanics and Optics (Russian Federation)
H. Helava, Nitride Crystals, Inc. (United States)
Yu. Makarov, Nitride Crystals, Inc. (United States)

Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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