Share Email Print

Proceedings Paper

Ultra-low noise and exceptional uniformity of SensL C-series SiPM sensors
Author(s): C. Jackson; L. Wall; Kevin O'Neill; B. McGarvey; D. Herbert
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

SensL C-Series Silicon Photomultiplier (SiPM) sensors are fabricated in a high-volume CMOS foundry to a custom SensL process, and packaged as a reflow solderable surface mount device. Advances in SiPM production have resulted in significant improvement in PDE, dark current as well as tighter breakdown voltage uniformity for the C-Series SiPM sensors. The SiPM are fabricated with a shallow P-on-N junction optimized for the detection of shorter wavelength photons, with a peak PDE of 41% at 420nm and excellent sensitivity extending to wavelengths <300nm. The dark currents have been reduced through the reduction of damage during semiconductor processing and an order of magnitude reduction has been achieved. The breakdown voltage variation has been improved through process optimization to minimize variations. With these process improvements typical dark count rates of ~30kHz/mm2 are achieved simultaneously with breakdown voltage uniformity of ±213mV demonstrated. In addition, application specific measurements of CRT (Coincidence Resolving Time) that are relevant to PET (positron emission tomography) will be shown to be 210ps at 7.5V overvoltage. In addition to device characterization work, this paper will address the wafer-level fabrication and testing, package level testing required by high volume SiPM sensor applications.

Paper Details

Date Published: 16 March 2015
PDF: 12 pages
Proc. SPIE 9359, Optical Components and Materials XII, 93591C (16 March 2015); doi: 10.1117/12.2076898
Show Author Affiliations
C. Jackson, SensL (Ireland)
L. Wall, SensL (Ireland)
Kevin O'Neill, SensL (Ireland)
B. McGarvey, SensL (Ireland)
D. Herbert, SensL (Ireland)

Published in SPIE Proceedings Vol. 9359:
Optical Components and Materials XII
Shibin Jiang; Michel J. F. Digonnet, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?