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Proceedings Paper

Flexibility properties of type-II InAs/GaSb SL to design MWIR pin photodiodes
Author(s): P. Christol; M. Delmas; J. B. Rodriguez; E. Giard; I. Ribet-Mohamed; J. Imbert; S. Derelle; V. Trinité
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Paper Abstract

InAs/GaSb superlattice (SL) is a peculiar quantum system for infrared detection, where electrical and optical properties are directly governed by the composition and the periodicity of the InAs/GaSb cell. Indeed, several structures with different InAs to GaSb thickness ratios in each SL period, can target the same cut-off wavelength. Likewise, the type of conductivity of the non-intentionally doped SL structure is also linked to the InAs/GaSb SL period. The objective of this communication is to use the flexibility properties of InAs/GaSb SL to design and then to fabricate by MBE a pin photodiode where the active zone is made of different SL periods. Electrical and electro-optical characterizations are reported. The results show that SL structure for the MWIR domain can be designed by combining the best of each SL periods.

Paper Details

Date Published: 8 February 2015
PDF: 9 pages
Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 93701Z (8 February 2015); doi: 10.1117/12.2076569
Show Author Affiliations
P. Christol, Institut d'Electronique du Sud, CNRS, Univ. Montpellier (France)
M. Delmas, Institut d'Electronique du Sud, CNRS, Univ. Montpellier (France)
J. B. Rodriguez, Institut d'Electronique du Sud, CNRS, Univ. Montpellier (France)
E. Giard, ONERA (France)
I. Ribet-Mohamed, ONERA (France)
J. Imbert, ONERA (France)
Alcatel Thales III-V Lab. (France)
S. Derelle, ONERA (France)
V. Trinité, Alcatel Thales III-V Lab. (France)

Published in SPIE Proceedings Vol. 9370:
Quantum Sensing and Nanophotonic Devices XII
Manijeh Razeghi; Eric Tournié; Gail J. Brown, Editor(s)

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