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Proceedings Paper

Above-threshold numerical modeling of high-index-contrast photonic-crystal quantum cascade lasers
Author(s): Anatoly P. Napartovich; N. N. Elkin; D. V. Vysotsky; J. Kirch; C. Sigler; D. Botez; L. J. Mawst; A. Belyanin
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Paper Abstract

Three-dimensional above-threshold analyses of high-index-contrast (HC) photonic-crystal (PC) quantum-cascade-laser arrays (QCLA) structures, for operation at watt-range CW powers in a single spatial mode, have been performed. Threeelement HC-PC structures are formed by alternating active- antiguided and passive-guided regions along with respective metal-electrode spatial profiling. The 3-D numerical code takes into account absorption and edge-radiation losses. Rigrod’s approximation is used for the gain. The specific feature of QCLA is that only the transverse component of the magnetic field sees the gain. Results of above-threshold laser modeling in various approximate versions of laser-cavity description are compared with the results of linear, full-vectorial modeling by using the COMSOL package. Additionally, modal gains for several higher-order optical modes, on a ‘frozen gain background’ produced by the fundamental-mode, are computed by the Arnoldi algorithm. The gain spatial-hole burning effect results in growth of the competing modes’ gain with drive current. Approaching the lasing threshold for a competing higher-order mode sets a limit on the single-mode operation range. The modal structure and stability are studied over a wide range in the variation of the inter-element widths. Numerical analyses predict that the proper choice of construction parameters ensures stable single-mode operation at high drive levels above threshold. The output power from a single- mode operated QCLA at a wavelength of 4.7 μm is predicted to be available at multi-watt levels, although this power may be restricted by thermal effects.

Paper Details

Date Published: 10 March 2015
PDF: 11 pages
Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93821L (10 March 2015); doi: 10.1117/12.2076504
Show Author Affiliations
Anatoly P. Napartovich, Troitsk Institute for Innovation and Fusion Research (Russian Federation)
N. N. Elkin, Troitsk Institute for Innovation and Fusion Research (Russian Federation)
Moscow Institute for Physics and Technology (Russian Federation)
D. V. Vysotsky, Troitsk Institute for Innovation and Fusion Research (Russian Federation)
Moscow Institute for Physics and Technology (Russian Federation)
J. Kirch, Univ. of Wisconsin-Madison (United States)
C. Sigler, Univ. of Wisconsin-Madison (United States)
D. Botez, Univ. of Wisconsin-Madison (United States)
L. J. Mawst, Univ. of Wisconsin-Madison (United States)
A. Belyanin, Texas A&M Univ. (United States)

Published in SPIE Proceedings Vol. 9382:
Novel In-Plane Semiconductor Lasers XIV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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