(-201) oriented β-Ga₂O₃ has the potential to be used as a transparent and conductive substrate for GaN-growth. The key advantages of Ga₂O₃ are its small lattice mismatches (4.7%), appropriate structural, thermal and electrical properties and a competitive price compared to other substrates. Optical characterization show that GaN layers grown on (-201) oriented β-Ga₂O₃ are dominated by intense bandedge emission with a high luminescence efficiency. Atomic force microscopy studies show a modest threading dislocation density of ~10⁸ cm^-2, while complementary Raman spectroscopy indicates that the GaN epilayer is of high quality with slight compressive strain. Room temperature time-findings suggest that the limitation of the photoluminescence lifetime (~500 ps) is due to nonradiative recombination arising from threading dislocation. Therefore, by optimizing the growth conditions, high quality material with significant optical efficiency can be obtained.

Date Published: 13 March 2015
PDF: 8 pages
Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93641K (13 March 2015); doi: 10.1117/12.2076475

Published in SPIE Proceedings Vol. 9364:
Oxide-based Materials and Devices VI
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)