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Proceedings Paper

Improved efficiency in room temperature >3µm diodes using highly strained quantum wells
Author(s): Chunte Lu; Ron Kaspi; Tim Newell; Chi Yang; Sanh Luong; Don Gianardi
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Paper Abstract

We present experimental comparison of Type-I diode lasers emitting <3 μm wavelength in room temperature with increased strain in quantum wells (QWs). Due to diminishing hole confinement in the barrier, the performance of mid- IR Type-I diode laser is generally poor. Here we improve the hole confinement using quinary alloy in the barrier in conjunction with highly strained QWs. By using molecular beam epitaxial growth method, we achieve up to 2.3% strain in the QWs. At near room temperature, highly strained laser structure shows approximately 4 times improved laser performance than regular strained laser under the same testing condition. The study demonstrates significant improvement in laser efficiency using highly strained QWs in the GaSb-based type-I mid-infrared laser diodes.

Paper Details

Date Published: 10 March 2015
PDF: 6 pages
Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93821Q (10 March 2015); doi: 10.1117/12.2076391
Show Author Affiliations
Chunte Lu, Air Force Research Lab. (United States)
Ron Kaspi, Air Force Research Lab. (United States)
Tim Newell, Air Force Research Lab. (United States)
Chi Yang, Air Force Research Lab. (United States)
Sanh Luong, Air Force Research Lab. (United States)
Don Gianardi, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 9382:
Novel In-Plane Semiconductor Lasers XIV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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