We fabricated InGaN LEDs prepared on β-Ga₂O₃ (201) single-crystal substrates. The substrates were produced by using the edge-defined film-fed growth (EFG) method. A Si-doped GaN epitaxial layer was grown on an electrically conductive β-Ga₂O₃ (201) substrate by metal organic chemical vapor deposition (MOCVD). The full-width at half maximum (FWHM) of (0002) and (101 1) X-ray rocking curves (XRCs) of the Si-doped GaN layer were 220 arcsec and 223 arcsec, respectively. The dark spot density measured by cathode luminescence (CL) was approximately 1.5×10⁸ cm^-2. The crystalline quality was equal to that of GaN layer on sapphire. We fabricated a vertical LED in the p-side down configuration. The peak wavelength was approximately 450 nm. The p-contact metal area was 300 ×300 μm². The light output power did not saturate at 1000 A/cm². This device characteristic indicates the great potential of Ga₂O₃ for use in high-power LEDs.

Date Published: 27 April 2015
PDF: 6 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631Z (27 April 2015); doi: 10.1117/12.2076114

Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)