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Proceedings Paper

InGaN LEDs prepared on beta-Ga2O3 (-201) substrates
Author(s): Kazuyuki Iizuka; Yoshikatsu Morishima; Akito Kuramata; Yu-Jiun Shen; Chang-Yu Tsai; Ying-Yong Su; Gavin Liu; Ta-Cheng Hsu; J. H. Yeh
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Paper Abstract

We fabricated InGaN LEDs prepared on β-Ga2O3 (201) single-crystal substrates. The substrates were produced by using the edge-defined film-fed growth (EFG) method. A Si-doped GaN epitaxial layer was grown on an electrically conductive β-Ga2O3 (201) substrate by metal organic chemical vapor deposition (MOCVD). The full-width at half maximum (FWHM) of (0002) and (101 1) X-ray rocking curves (XRCs) of the Si-doped GaN layer were 220 arcsec and 223 arcsec, respectively. The dark spot density measured by cathode luminescence (CL) was approximately 1.5×108 cm-2. The crystalline quality was equal to that of GaN layer on sapphire. We fabricated a vertical LED in the p-side down configuration. The peak wavelength was approximately 450 nm. The p-contact metal area was 300 ×300 μm2. The light output power did not saturate at 1000 A/cm2. This device characteristic indicates the great potential of Ga2O3 for use in high-power LEDs.

Paper Details

Date Published: 27 April 2015
PDF: 6 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631Z (27 April 2015); doi: 10.1117/12.2076114
Show Author Affiliations
Kazuyuki Iizuka, Tamura Thermal Device Corp. (Japan)
Yoshikatsu Morishima, Tamura Thermal Device Corp. (Japan)
Akito Kuramata, Tamura Thermal Device Corp. (Japan)
Yu-Jiun Shen, Epistar Corp. (Taiwan)
Chang-Yu Tsai, Epistar Corp. (Taiwan)
Ying-Yong Su, Epistar Corp. (Taiwan)
Gavin Liu, Epistar Corp. (Taiwan)
Ta-Cheng Hsu, Epistar Corp. (Taiwan)
J. H. Yeh, Epistar Corp. (Taiwan)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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