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Proceedings Paper

Optoelectronic properties of Si/Ge superlattices
Author(s): Michael A. Gell
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Paper Abstract

Theoretical predictions of electronic and optical properties of short period Si/Ge superlattices are presented. Attention is focused on critical point structure and the effects of the superlattice compositional modulation and the buffer on band edge absorption. The band edge absorption is the main distinguishing feature of the different superlattice configurations. The construction conditions for direct-gap Si/Ge superlattices are specified. Theoretical results are discussed in relation to recent experimental work.

Paper Details

Date Published: 1 October 1990
PDF: 9 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20757
Show Author Affiliations
Michael A. Gell, British Telecom Research Labs. (United Kingdom)

Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

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