Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°). This structure paves the way towards low-noise infrared detection, using non-degenerate TPA, involving two photons of vastly different energies in the same process of absorption in a large bandgap semiconductor material.

Date Published: 8 February 2015
PDF: 7 pages
Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 937018 (8 February 2015); doi: 10.1117/12.2075527

Published in SPIE Proceedings Vol. 9370:
Quantum Sensing and Nanophotonic Devices XII
Manijeh Razeghi; Eric Tournié; Gail J. Brown, Editor(s)