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Proceedings Paper

Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
Author(s): Snežana Lazić; Ekaterina Chernysheva; Žarko Gačević; Noemi García-Lepetit; Herko P. van der Meulen; Marcus Müller; Frank Bertram; Peter Veit; Jürgen Christen; Almudena Torres-Pardo; José M. González Calbet; Enrique Calleja; José M. Calleja
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Paper Abstract

The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nanodisks. The structures were fabricated by molecular beam epitaxy on (0001) GaN-on-sapphire templates patterned with nanohole masks prepared by colloidal lithography. Low-temperature cathodoluminescence measurements reveal the spatial distribution of light emitted from a single nanowire heterostructure. The emission originating from the topmost part of the InGaN regions covers the blue-to-green spectral range and shows intense and narrow quantum dot-like photoluminescence lines. These lines exhibit an average linear polarization ratio of 92%. Photon correlation measurements show photon antibunching with a g(2)(0) values well below the 0.5 threshold for single photon emission. The antibunching rate increases linearly with the optical excitation power, extrapolating to the exciton decay rate of ~1 ns-1 at vanishing pump power. This value is comparable with the exciton lifetime measured by time-resolved photoluminescence. Fast and efficient single photon emitters with controlled spatial position and strong linear polarization are an important step towards high-speed on-chip quantum information management.

Paper Details

Date Published: 13 March 2015
PDF: 8 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630U (13 March 2015); doi: 10.1117/12.2074898
Show Author Affiliations
Snežana Lazić, Univ. Autónoma de Madrid (Spain)
Ekaterina Chernysheva, Univ. Autónoma de Madrid (Spain)
Žarko Gačević, Univ. Politécnica de Madrid (Spain)
Noemi García-Lepetit, Univ. Autónoma de Madrid (Spain)
Herko P. van der Meulen, Univ. Autónoma de Madrid (Spain)
Marcus Müller, Otto-von-Guericke Univ. Magdeburg (Germany)
Frank Bertram, Otto-von-Guericke-Univ. Magdeburg (Germany)
Peter Veit, Otto-von-Guericke-Univ. Magdeburg (Germany)
Jürgen Christen, Otto-von-Guericke-Univ. Magdeburg (Germany)
Almudena Torres-Pardo, Univ. Complutense de Madrid (Spain)
José M. González Calbet, Univ. Complutense de Madrid (Spain)
Enrique Calleja, Univ. Politécnica de Madrid (Spain)
José M. Calleja, Univ. Autónoma de Madrid (Spain)

Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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