Proceedings Paper
Delocalization of the excitons via the X-valley in GaAs/A1As quantum wells| Format | Member Price | Non-Member Price |
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Paper Abstract
The results of magnetoreflection, photoluminescence and photoluminescence
excitation experiments are reported in GaAs-AlAs multiple quantum wells of
different well widths, demonstrating the influence of the X-band in the AlAs on
the electron levels in GaAs. Evidence is presented for the existence of an
exciton formed from a delocalized electron, and for the conduction of electrons
from narrow wells to wide wells via the X-band of AlAs.
Paper Details
Date Published: 1 October 1990
PDF: 7 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20746
Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)
PDF: 7 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20746
Show Author Affiliations
Mitra B. Dutta, U.S. Army Electronic Technology and Devices Lab. (United States)
Doran D. Smith, U.S. Army Electronic Technology and Devices Lab. (United States)
Peter G. Newman, U.S. Army Electronic Technology and Devices Lab. (United States)
Doran D. Smith, U.S. Army Electronic Technology and Devices Lab. (United States)
Peter G. Newman, U.S. Army Electronic Technology and Devices Lab. (United States)
Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)
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