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Proceedings Paper

Scanning removal of ion-implanted novolak resist by using a laser irradiation
Author(s): Tomosumi Kamimura; Yuta Kuroki; Takuya Kiriyama; Hiroki Muraoka; Takashi Nishiyama; Yoshiyuki Harada; Hiroyuki Kuramae; Hideo Horibe
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Paper Abstract

Novolak resists which are implanted with B, P, and As ions, respectively, were irradiated with a pulsed 532nm laser. Regardless of the implanted ion species and density, more than 74 % of the laser power was found to absorb into the Si wafer surface. For the laser irradiation of 1 pulse, the ion-implanted resist with a density of 5.0x1013 atoms/cm2 was completely stripped in the same way as that of a non-implanted resist. The optical absorption of the resist surface increased as the density of the ion-implantation increased. In case of the ion-implanted resist with a density of 5.0x1015 atoms/cm2, the resist was stripped by 20 pulses irradiation without occurring laser-induced surface damage. A scanning removal of the highly ion-implanted resist was also successfully stripped by using an optimized irradiation condition. A highly ion-implanted resist was continuously stripped by the scanning laser irradiation with 20 pulses.

Paper Details

Date Published: 22 September 2014
PDF: 4 pages
Proc. SPIE 9238, Pacific Rim Laser Damage 2014: Optical Materials for High-Power Lasers, 92380J (22 September 2014); doi: 10.1117/12.2073477
Show Author Affiliations
Tomosumi Kamimura, Osaka Institute of Technology (Japan)
Yuta Kuroki, Osaka Institute of Technology (Japan)
Takuya Kiriyama, Osaka Institute of Technology (Japan)
Hiroki Muraoka, Osaka Institute of Technology (Japan)
Takashi Nishiyama, Osaka City Univ. (Japan)
Yoshiyuki Harada, Osaka Institute of Technology (Japan)
Hiroyuki Kuramae, Osaka Institute of Technology (Japan)
Hideo Horibe, Osaka City Univ. (Japan)


Published in SPIE Proceedings Vol. 9238:
Pacific Rim Laser Damage 2014: Optical Materials for High-Power Lasers
Takahisa Jitsuno; Jianda Shao; Wolfgang Rudolph, Editor(s)

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